About the topic
The structural and electronic properties of Frank partial dislocations in the photovoltaic absorber material Cu (In,Ga)Se2 are studied by means of calculations based on density-functional theory. In line with recent experimental observations, we find that point defect segregation inside and around such dislocation cores is preferred. Furthermore, our results show that decorated Frank partials are non-radiative recombination centers and their annihilation is essential in order to obtain Cu (In,Ga)Se2 absorbers with high conversion efficiencies.
About the speaker
Daniel started his studies in Universidad del Norte where he obtained a B.Sc. in electronic engineering.
Afterwards he changed fields and started a M.Sc in applied physics in the same University. In 2011, he
came to Germany to continue his studies and pursued a M.Sc in computational science in Goethe
Universität Frankfurt. Then he started a doctorate in materials science in TU Darmstadt where he
successfully defended his thesis on September 2018.